GlobalFoundries, Navitas Semiconductor Collaborate To Enhance, Accelerate U.S.-Based Gallium Nitride Technology, Design, Production

Author: Benzinga Newsdesk | November 20, 2025 08:36am

GlobalFoundries (Nasdaq: GFS) (GF) and Navitas Semiconductor (NASDAQ:NVTS) today announced a long-term strategic partnership to strengthen and accelerate U.S.-based gallium nitride (GaN) technology, design and manufacturing. Together, the companies will collaborate, develop and deliver advanced solutions for critical applications in high power markets that demand the highest efficiency and power density, including AI datacenters, performance computing, energy and grid infrastructure and industrial electrification.

Navitas Semiconductor, a pioneer in GaN and high-voltage SiC technologies, has achieved successful GaN deployment in high-volume markets such as mobile fast chargers, consumer, performance computing, electric vehicles, energy storage and industrial devices and is working to accelerate GaN adoption in high power markets. GF brings decades of experience as a trusted global foundry partner, ensuring reliable, high-quality production at scale. Through this long-term partnership, GF and Navitas Semiconductor will manufacture next-generation GaN technology at GF's Burlington, Vermont facility, leveraging the site's expertise in high-voltage GaN-on-Silicon technology and Navitas Semiconductor's long established GaN technology and device expertise. Development is set for early 2026 with production expected to begin later in the year.

Posted In: GFS NVTS